Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a large memory window of ~2.6 V under ±8 V sweeping voltage, and it shows only ~14% charge loss after more t...

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as c...

Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

The charge-trapping characteristics of Ga2O3 (Gd2O3 ) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3 / GGO/SiO2 /Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (...

Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications